Samsung has announced that it has started mass production of first commercial embedded magnetic random access memory (eMRAM) product based on the company’s 28-nanometer(nm) fully-depleted silicon-on-insulator (FD-SOI) process technology, called 28FDS.
The eMRAM is a successor of eFlash and works on resistance-based operation that allows strong scalability and als includes memory semiconductor characteristics such as nonvolatility, random access, and strong endurance.
Samsung said this 28FDS-based eMRAM solution offers power and speed advantages in lower price. The eMRAM does not requires an erase cycle before writing data that makes its writing speed approximately a thousand times faster than eFlash. Also, eMRAM uses lower voltage compared to eFlash and does not consume electric power when in power-off mode for power efficiency.
The company also said that an eMRAM module can easily be inserted in the back-end of the process by adding least number of layers, it has less dependence on the front-end of the process for easy integration with existing logic technologies, such as bulk, fin, and FD-SOI transistor.
“By integrating eMRAM with existing proven logic technologies, Samsung Foundry continues to expand its eNVM process portfolio to provide distinct competitive advantages and excellent manufacturability to meet customers and market requirement.” said Ryan Lee, vice president of foundry marketing at Samsung Electronics.
The South Korean tech Giant arranged a ceremony to celebrate the first shipment of eMRAM product will be held on March 6 at Samsung's Giheung campus, Korea. The company is also also planning to expand its options for high-density eNVM solutions, including a tape-out of 1GB eMRAM test chip later this year.