Samsung has announced that it has begun mass producing the 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.0 solution for mobile devices. This eUFS storage delivers twice the speed compared to previous gen eUFS.
The 512GB eUFS 3.0 drives a sequential read speed up to 2100 MB/s, twice as fast as the existing eUFS 2.1's read speeds. This new eUFS is four times faster than a SATA drive and 20 times faster than a typical microSD card, empowering a premium smart to transfer an FHD movie into a PC in three seconds.
As the sequential write speed has also been improved by 50 percent to 410MB/s, which is equivalent to a SATA SSD.
Furthermore, the random read and write speeds have received up to a 36-percent increase over the current eUFS 2.1, at 63,000 and 68,000 input/Output operations per seconds (IOPS), respectively.
Also, this new 512GB eUFS is packed with eight fifth-gen 512GB V-NAND chips
Back in January, Samsung said that it has begun mass production of the world's first 1TB eUFS storage solution for the premium mobile and heavy data mobile applications.
Samsung announced that the 512GB eUFS 3.0 as well as a 128GB version that will be launching this month, the company also plans to produce 1TB and 256GB models in the second half of the year.