Samsung has moved further in the field of storage solution for flagship smartphones and announced that it has begun mass production of the industry’s first 1-terabyte(TB) embedded Universal Flash Storage (eUFS) 2.1. As this 1TB eUFS is much expected to be installed in a variant of the Galaxy S10.
The company said it has come up with this new memory solution in four years after introducing its first UFS solution, the 128GB eUFS.
According to Samsung, these new memory chip is powered by the company’s fifth-generation V-NAND technology and delivers doubles the capacity of 512GB memory solution.
The new eUFS will allow Smartphone users to store 260 10-minute videos in 4K UHD (3840×2160) format, whereas the 64GB eUFS widely used in many current high-end smartphones is capable of storing 13 videos of the same size.
Also, it will allow users to trasfer large amount of content at up to 1,000 megabytes per second (MB/s), as the new eUFS features approximately twice the sequential read speed of a typical 2.5-inch SATA solid state drive (SSD).
Furthermore, the random read speed has increased by up to 38 percent over the 512GB version, clocking in at up to 58,000 IOPS. Random writes are 500 times faster than a high-performance microSD card (100 IOPS), coming in at up to 50,000 IOPS.
The random speeds allow for high-speed continuous shooting at 960 frames per second and will enable smartphone users to take full advantage of the multi-camera capabilities in today and tomorrow’s flagship models.
“The 1TB eUFS is expected to play a critical role in bringing more notebook-like user experience to the next generation of mobile devices,” said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics.
Samsung said it has plans to expand the production of its fifth-generation 512Gb V-NAND at its Pyeongtaek plant in Korea throughout the first half of 2019 to fully address the anticipated strong demand for the 1TB eUFS from mobile device manufacturers around the world.