On October 18, 2018, Samsung announced several next-generation semiconductor technologies in the foundry as well as NAND flash, SSD (solid state drive) and DRAM.
The tech giant, which held Samsung Tech Day in Silicon Valley on Thursday unveiled various new products including:
7nm EUV process node from Samsung’s Foundry Business, providing significant efforts forward in power, performance and area.
SmartSSD, a field programmable gate array (FPGA) SSD, that will offer accelerated data processing and the ability to bypass server CPU limits.
QLC-SSD for enterprise and data centers that offer 33-percent more storage per cell than TLC-SSD, consolidating of storage footprints and improving total cost of ownership (TCO).
256-gigabyte (GB) 3DS (3-dimensional stacking) RDIMM (registered dual in-line memory module), based on 10nm-class 16-gigabit (Gb) DDR4 DRAM that will double current maximum capacity to deliver higher performance and lower power consumption by 30 percent compared with 128-GB RDIMM.
The company, in addition, unveiled a 7.68-TB server solid-state drive (SSD) and the sixth-generation V-NAND technology, boasting its technology achievement in the chip industry.
“Samsung’s technology leadership and product breadth are unparalleled, bringing 7nm EUV into production is an incredible achievement. Also, the announcements of SmartSSD and 256GB 3DS RDIMM represent performance and capacity breakthroughs that will continue to push computing boundaries.” said the company.
“Together, these additions to Samsung’s comprehensive technology ecosystem will power the next generation of data centers, high-performance computing (HPC), enterprise, artificial intelligence (AI) and emerging applications.” It added.
Experts across the industry, including Apple co-founder, Steve Wozniak, were invited at Samsung Tech Day to address the advancements and challenges in today’s semiconductor market, and offer insights for the future of semiconductors. More than 400 customers, partners, and industry influencers attended the event.