Today, Samsung officially announced that it has developed a new 10-nanometer (nm) mobile Dynamic Random-Access Memory (DRAM) solution optimized for the fifth-generation (5G) network and artificial intelligence (AI) features of smartphones.
Samsung Electronics said it has completed the development of the 10nm-class 8Gb LPDDR5 DRAM in April, boasts a data transfer rate of up to 6,400 megabits per second (Mb/s), which is 1.5 times as fast as the mobile DRAM chips used in current flagship mobile devices (LPDDR4X, 4266Mb/s).
It will increase the transfer rate, it can send 51.2 gigabytes (GB) of data, or approximately 14 full-HD video files (3.7GB each), in a second.
In order to achieve low power consumption, the new LPDDR5 chip offers a ‘deep sleep mode’, which cuts the power usage to approximately half the ‘idle mode’ of the current LPDDR4X DRAM.
Samsung said the 8Gb LPDDR5 DRAM consumes 30 percent less power compared with the predecessor, allowing smartphones to achieve long-lasting performance and battery life.
The company also said such developments will allow smartphones to come with stable ultra-HD, AI, and machine-learning features as well.
“This development of 8Gb LPDDR5 represents a major step forward for low-power mobile memory solutions,” the company said. “We will continue to expand our next-generation 10nm-class DRAM lineup as we accelerate the move toward greater use of premium memory across the global landscape.”
The 10nm-class LPDDR5 DRAM will be available in two bandwidths – 6,400Mb/s at a 1.1 operating voltage (V) and 5,500Mb/s at 1.05V for next-generation smartphones and automotive systems.
Samsung Electronics said the mass production of its next-generation DRAM lineups (LPDDR5, DDR5, and GDDR6) will begin in the near future depending on the demand from its clients.